Specifications
| Supplier Device Package | PG-TDSON-8-1 |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 50A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Current | 13.4A (Ta), 98A (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 120 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package | 8-PowerTDFN |
| Power Dissipation (Max) | 139W (Tc) |