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Infineon Technologies

BSC0911NDATMA1

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Infineon Technologies

BSC0911NDATMA1

MOSFET 2N-CH 25V 18A/30A TISON8
Specifications
Supplier Device Package PG-TISON-8
Vgs(th) (Max) @ Id 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 12V
Configuration 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 3.2mOhm @ 20A, 10V
Technology MOSFET (Metal Oxide)
Current 18A, 30A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 25V
Mounting Type Surface Mount
Package 8-PowerTDFN
FET Feature Logic Level Gate, 4.5V Drive
Power 1W

Talk to a Human: (608) 338-0082