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Infineon Technologies

BSC093N04LSGATMA1

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Infineon Technologies

BSC093N04LSGATMA1

MOSFET N-CH 40V 13A/49A TDSON
Specifications
Supplier Device Package PG-TDSON-8-5
Vgs(th) (Max) @ Id 2V @ 14µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 40A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Current 13A (Ta), 49A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 40 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-PowerTDFN
Power Dissipation (Max) 2.5W (Ta), 35W (Tc)

Talk to a Human: (608) 338-0082