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Infineon Technologies

BSC098N10NS5ATMA1

Total in Stock: 5250 parts

Infineon Technologies

BSC098N10NS5ATMA1

MOSFET N-CH 100V 60A TDSON
Specifications
Supplier Device Package PG-TDSON-8-7
Vgs(th) (Max) @ Id 3.8V @ 36µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 30A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Current 60A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-PowerTDFN
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)

Talk to a Human: (608) 338-0082