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Total in Stock: 11873 parts
N-CHANNEL ENHANCEMENT MODE MOSFE
Specifications
Supplier Device Package SOT-23
Vgs(th) (Max) @ Id 2.5V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 14 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 10 V
Current 200mA (Ta)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 350mW (Ta)

Talk to a Human: (608) 338-0082