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Infineon Technologies

BSS127H6327XTSA2

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Infineon Technologies

BSS127H6327XTSA2

MOSFET N-CH 600V 21MA SOT23-3
Specifications
Supplier Device Package PG-SOT23
Vgs(th) (Max) @ Id 2.6V @ 8µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V
Current 21mA (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 500mW (Ta)

Talk to a Human: (608) 338-0082