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Infineon Technologies

BSS87H6327XTSA1

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Infineon Technologies

BSS87H6327XTSA1

MOSFET N-CH 240V 260MA SOT89-4
Specifications
Supplier Device Package PG-SOT89-4-2
Vgs(th) (Max) @ Id 1.8V @ 108µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 260mA, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V
Current 260mA (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 240 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-243AA
Power Dissipation (Max) 1W (Ta)

Talk to a Human: (608) 338-0082