Talk to a Human: (608) 338-0082

Diodes Incorporated

DMG6602SVT-7

This order may require lead time

Diodes Incorporated

DMG6602SVT-7

MOSFET N/P-CH 30V TSOT23-6
Specifications
Supplier Device Package TSOT-26
Vgs(th) (Max) @ Id 2.3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Configuration N and P-Channel
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V
Technology MOSFET (Metal Oxide)
Current 3.4A, 2.8A
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30V
Mounting Type Surface Mount
Package SOT-23-6 Thin, TSOT-23-6
FET Feature Logic Level Gate, 4.5V Drive
Power 840mW

Talk to a Human: (608) 338-0082