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Diodes Incorporated

DMG7401SFGQ-7

This order may require lead time

Diodes Incorporated

DMG7401SFGQ-7

MOSFET P-CH 30V 9.8A PWRDI3333-8
Specifications
Supplier Device Package PowerDI3333-8
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 2987 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 20V
Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 20V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Current 9.8A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±25V
Package 8-PowerVDFN
Power Dissipation (Max) 940mW (Ta)

Talk to a Human: (608) 338-0082