Specifications
| Supplier Device Package | PowerDI5060-8 |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4234 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 9.8A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 47.5 nC @ 5 V |
| Current | 8.5A (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 40 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±25V |
| Package | 8-PowerTDFN |
| Power Dissipation (Max) | 1.3W (Ta) |