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MOSFET 2N-CH 20V 0.3A EMT6
Specifications
Supplier Device Package EMT6
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Configuration 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 1Ohm @ 300mA, 4V
Technology MOSFET (Metal Oxide)
Current 300mA
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 20V
Mounting Type Surface Mount
Package SOT-563, SOT-666
FET Feature Logic Level Gate
Power 150mW

Talk to a Human: (608) 338-0082