Specifications
| Supplier Device Package | Die |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 5.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 50V |
| Configuration | 2 N-Channel (Half Bridge) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 20A, 5V |
| Technology | GaNFET (Gallium Nitride) |
| Current | 23A |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 100V |
| Mounting Type | Surface Mount |
| Package | Die |