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Onsemi

FDC3535

This order may require lead time

Onsemi

FDC3535

MOSFET P-CH 80V 2.1A SUPERSOT6
Specifications
Supplier Device Package SuperSOT™-6
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 183mOhm @ 2.1A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Current 2.1A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 80 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) 1.6W (Ta)

Talk to a Human: (608) 338-0082