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MOSFET P-CH 20V 4.5A SUPERSOT6
Specifications
Supplier Device Package SuperSOT™-6
Vgs(th) (Max) @ Id 1.5V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 4.5A, 4.5V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Current 4.5A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 20 V
Mounting Type Surface Mount
Vgs (Max) ±12V
Package SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) 1.6W (Ta)

Talk to a Human: (608) 338-0082