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Onsemi

FDS2670

Total in Stock: 13272 parts

Onsemi

FDS2670

MOSFET N-CH 200V 3A 8SOIC
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 4.5V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1228 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 3A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Current 3A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max) 2.5W (Ta)

Talk to a Human: (608) 338-0082