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MOSFET N-CH 60V 6.1A 8SOIC
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1310 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 6.1A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Current 6.1A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max) 5W (Ta)

Talk to a Human: (608) 338-0082