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MOSFET 2N-CH 20V 7.5A 8SOIC
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 1.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 10V
Configuration 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 18mOhm @ 7.5A, 4.5V
Technology MOSFET (Metal Oxide)
Current 7.5A
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 20V
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate
Power 900mW

Talk to a Human: (608) 338-0082