Specifications
Supplier Device Package | TO-252AA |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V |
Technology | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
Current | 12A (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) | 60 V |
Mounting Type | Surface Mount |
Vgs (Max) | ±25V |
Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |