Specifications
| Supplier Device Package | TO-247-4 |
|---|---|
| Vgs(th) (Max) @ Id | 2.69V @ 7.5mA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Technology | SiCFET (Silicon Carbide) |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Current | 41A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Mounting Type | Through Hole |
| Vgs (Max) | ±15V |
| Package | TO-247-4 |
| Power Dissipation (Max) | 207W (Tc) |