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Infineon Technologies

IPD80R1K4P7ATMA1

This order may require lead time

Infineon Technologies

IPD80R1K4P7ATMA1

MOSFET N-CH 800V 4A TO252
Specifications
Supplier Device Package PG-TO252-2
Vgs(th) (Max) @ Id 3.5V @ 700µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Current 4A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 800 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 32W (Tc)

Talk to a Human: (608) 338-0082