Specifications
| Supplier Device Package | PG-TO220-3-1 |
|---|---|
| Vgs(th) (Max) @ Id | 2.2V @ 340µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Current | 120A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 40 V |
| Mounting Type | Through Hole |
| Vgs (Max) | +5V, -16V |
| Package | TO-220-3 |
| Power Dissipation (Max) | 136W (Tc) |