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Infineon Technologies

IPT015N10N5ATMA1

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Infineon Technologies

IPT015N10N5ATMA1

MOSFET N-CH 100V 300A 8HSOF
Specifications
Supplier Device Package PG-HSOF-8-1
Vgs(th) (Max) @ Id 3.8V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 150A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V
Current 300A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-PowerSFN
Power Dissipation (Max) 375W (Tc)

Talk to a Human: (608) 338-0082