Specifications
| Supplier Device Package | TO-262 |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 24A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Current | 40A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 100 V |
| Mounting Type | Through Hole |
| Vgs (Max) | ±20V |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |