International Rectifier (Infineon Technologies)
IRF630NSPBF
Total in Stock:
36 parts
HEXFET POWER MOSFET
Specifications
| Supplier Device Package | D2PAK |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Current | 9.3A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 200 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Power Dissipation (Max) | 82W (Tc) |