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MOSFET P-CH 20V 5.3A 8SO
Specifications
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 2.5V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 10 V
Rds On (Max) @ Id, Vgs 60mOhm @ 5.3A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Current 5.3A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 20 V
Mounting Type Surface Mount
Vgs (Max) ±12V
Package 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max) 2.5W (Tc)

Talk to a Human: (608) 338-0082