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MOSFET 2P-CH 55V 3.4A 8-SOIC
Specifications
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Configuration 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 105mOhm @ 3.4A, 10V
Technology MOSFET (Metal Oxide)
Current 3.4A
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 55V
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate
Power 2W

Talk to a Human: (608) 338-0082