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Infineon Technologies

IRF8313TRPBF

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Infineon Technologies

IRF8313TRPBF

MOSFET 2N-CH 30V 9.7A 8SO
Specifications
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 2.35V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Configuration 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 15.5mOhm @ 9.7A, 10V
Technology MOSFET (Metal Oxide)
Current 9.7A
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 30V
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate
Power 2W

Talk to a Human: (608) 338-0082