Specifications
Supplier Device Package | TO-220AB |
---|---|
Vgs(th) (Max) @ Id | 4V @ 250µA |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
Technology | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
Current | 14A (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Drain to Source Voltage (Vdss) | 100 V |
Mounting Type | Through Hole |
Vgs (Max) | ±20V |
Package | TO-220-3 |
Power Dissipation (Max) | 79W (Tc) |