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Infineon Technologies

IRFB4020PBF

This order may require lead time

Infineon Technologies

IRFB4020PBF

MOSFET N-CH 200V 18A TO220AB
Specifications
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 4.9V @ 100µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 11A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Current 18A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Mounting Type Through Hole
Vgs (Max) ±20V
Package TO-220-3
Power Dissipation (Max) 100W (Tc)

Talk to a Human: (608) 338-0082