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Infineon Technologies

IRFL014NPBF

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Infineon Technologies

IRFL014NPBF

MOSFET N-CH 55V 1.9A SOT223
Specifications
Supplier Device Package SOT-223
Vgs(th) (Max) @ Id 4V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.9A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Current 1.9A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 55 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-261-4, TO-261AA
Power Dissipation (Max) 1W (Ta)

Talk to a Human: (608) 338-0082