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Total in Stock: 615 parts
MOSFET N-CH 100V 120A TO263-3-2
Specifications
Supplier Device Package PG-TO263-3-2
Vgs(th) (Max) @ Id 4V @ 150µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6860 pF @ 50 V
Rds On (Max) @ Id, Vgs 6mOhm @ 75A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Current 120A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 250W (Tc)

Talk to a Human: (608) 338-0082