Specifications
| Supplier Device Package | I-PAK |
|---|---|
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3779 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 50A, 10V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 4.5 V |
| Current | 50A (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 60 V |
| Mounting Type | Through Hole |
| Vgs (Max) | ±16V |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Power Dissipation (Max) | 143W (Tc) |