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Infineon Technologies

ISC027N10NM6ATMA1

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Infineon Technologies

ISC027N10NM6ATMA1

TRENCH >=100V PG-TDSON-8
Specifications
Supplier Device Package PG-TDSON-8 FL
Vgs(th) (Max) @ Id 3.3V @ 116µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 72.5 nC @ 10 V
Current 23A (Ta), 192A (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-PowerTDFN
Power Dissipation (Max) 3W (Ta), 217W (Tc)

Talk to a Human: (608) 338-0082