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MOSFET N-CH 200V 58A TO268
Specifications
Supplier Device Package TO-268AA
Vgs(th) (Max) @ Id 4V @ 4mA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 29A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Current 58A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max) 300W (Tc)

Talk to a Human: (608) 338-0082