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MOSFET P-CH 65V 120A TO263
Specifications
Supplier Device Package TO-263AA
Vgs(th) (Max) @ Id 4V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Current 120A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 65 V
Mounting Type Surface Mount
Vgs (Max) ±15V
Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 298W (Tc)

Talk to a Human: (608) 338-0082