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POWER FIELD-EFFECT TRANSISTOR, 5
Specifications
Supplier Device Package SOT-223-4
Vgs(th) (Max) @ Id 2.7V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 5.9A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Current 5.9A (Ta)
Operating Temperature -65°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-261-4, TO-261AA
Power Dissipation (Max) 3W (Ta)

Talk to a Human: (608) 338-0082