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Onsemi

NTTFS1D2N02P1E

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Onsemi

NTTFS1D2N02P1E

MOSFET N-CH 25V 23A/180A 8PQFN
Specifications
Supplier Device Package 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id 2V @ 934µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4040 pF @ 13 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 38A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
Current 23A (Ta), 180A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 25 V
Mounting Type Surface Mount
Vgs (Max) +16V, -12V
Package 8-PowerWDFN
Power Dissipation (Max) 820mW (Ta), 52W (Tc)

Talk to a Human: (608) 338-0082