Specifications
Supplier Device Package | DFN2020MD-6 |
---|---|
Vgs(th) (Max) @ Id | 900mV @ 250µA |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 6 V |
Rds On (Max) @ Id, Vgs | 9.6mOhm @ 12A, 4.5V |
Technology | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
Current | 12A (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Drain to Source Voltage (Vdss) | 12 V |
Mounting Type | Surface Mount |
Vgs (Max) | ±8V |
Package | 6-UDFN Exposed Pad |
Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |