Specifications
| Supplier Device Package | TO-236AB |
|---|---|
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 744 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 2.8A, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 4.5 V |
| Current | 2.8A (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 20 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±12V |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 480mW (Ta) |