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Rohm Semiconductor

RCX160N20

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Rohm Semiconductor

RCX160N20

MOSFET N-CH 200V 16A TO220FM
Specifications
Supplier Device Package TO-220FM
Vgs(th) (Max) @ Id 5.25V @ 1mA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 8A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Current 16A (Tc)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 200 V
Mounting Type Through Hole
Vgs (Max) ±30V
Package TO-220-3 Full Pack
Power Dissipation (Max) 2.23W (Ta), 40W (Tc)

Talk to a Human: (608) 338-0082