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Vishay

SI2304DDS-T1-GE3

This order may require lead time

Vishay

SI2304DDS-T1-GE3

MOSFET N-CH 30V 3.3A/3.6A SOT23
Specifications
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 2.2V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.2A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Current 3.3A (Ta), 3.6A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 1.1W (Ta), 1.7W (Tc)

Talk to a Human: (608) 338-0082