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Vishay

SI2308BDS-T1-GE3

Total in Stock: 3562 parts

Vishay

SI2308BDS-T1-GE3

MOSFET N-CH 60V 2.3A SOT23-3
Specifications
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Current 2.3A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 60 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)

Talk to a Human: (608) 338-0082