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Vishay

SI2312BDS-T1-E3

This order may require lead time

Vishay

SI2312BDS-T1-E3

MOSFET N-CH 20V 3.9A SOT23-3
Specifications
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 850mV @ 250µA
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Current 3.9A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 20 V
Mounting Type Surface Mount
Vgs (Max) ±8V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 750mW (Ta)

Talk to a Human: (608) 338-0082