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VBsemi Electronics Co Ltd

SI2319DS-T1-GE3

This order may require lead time

VBsemi Electronics Co Ltd

SI2319DS-T1-GE3

MOSFET P-CH 40V 2.3A SOT23-3
Specifications
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Current 2.3A (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 40 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 750mW (Ta)

Talk to a Human: (608) 338-0082