Specifications
| Supplier Device Package | SOT-23-3 (TO-236) |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.1A, 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 8 V |
| Current | 4.1A (Ta), 5.3A (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 20 V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±8V |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |