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Vishay

SI2329DS-T1-GE3

This order may require lead time

Vishay

SI2329DS-T1-GE3

MOSFET P-CH 8V 6A SOT23-3
Specifications
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 800mV @ 250µA
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 4 V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5.3A, 4.5V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V
Current 6A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 8 V
Mounting Type Surface Mount
Vgs (Max) ±5V
Package TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 2.5W (Tc)

Talk to a Human: (608) 338-0082