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Vishay

SI4178DY-T1-GE3

This order may require lead time

Vishay

SI4178DY-T1-GE3

MOSFET N-CH 30V 12A 8SO
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 2.8V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 8.4A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Current 12A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±25V
Package 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)

Talk to a Human: (608) 338-0082