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Vishay

SI4686DY-T1-E3

Total in Stock: 3229 parts

Vishay

SI4686DY-T1-E3

MOSFET N-CH 30V 18.2A 8SO
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 3V @ 250µA
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13.8A, 10V
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Current 18.2A (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Vgs (Max) ±20V
Package 8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max) 3W (Ta), 5.2W (Tc)

Talk to a Human: (608) 338-0082