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Vishay

SI4816BDY-T1-GE3

This order may require lead time

Vishay

SI4816BDY-T1-GE3

MOSFET 2N-CH 30V 5.8A 8-SOIC
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 3V @ 250µA
Configuration 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 18.5mOhm @ 6.8A, 10V
Technology MOSFET (Metal Oxide)
Current 5.8A, 8.2A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30V
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate
Power 1W, 1.25W

Talk to a Human: (608) 338-0082