Talk to a Human: (608) 338-0082

Vishay

SI4925BDY-T1-E3

This order may require lead time

Vishay

SI4925BDY-T1-E3

MOSFET 2P-CH 30V 5.3A 8-SOIC
Specifications
Supplier Device Package 8-SOIC
Vgs(th) (Max) @ Id 3V @ 250µA
Configuration 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V
Technology MOSFET (Metal Oxide)
Current 5.3A
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 30V
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate
Power 1.1W

Talk to a Human: (608) 338-0082